Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

摘要

We demonstrate the feasibility of multilevel recording inPt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switchingphenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population ofup and down ferroelectric domains able to modulate the Schottky barrier heightat the Pt/Bi(1-d)FeO3 interface can be achieved by means of either a collectionof SET/RESET voltages or current compliances. This programming scheme givesrise to well defined resistance states, which form the basis for a multilevelstorage nonvolatile memory.